BAT24-02LS

BAT24-02LS Single silicon RF Schottky diode Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02LS a suitable choice for mixer and detector functions in applications which frequencies are as high as 24 GHz. Feature list Low inductance LS = 0.2 nH (typical) Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 foot print Pb-free, RoHS compliant and halogen free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications For mixers and detectors in: Radar systems and modules Device information Table 1 Part information Product name / Ordering code BAT24-02LS / BAT2402LSE6327XTSA1 Package TSSLP-2-1 Pin configuration Single, leadless Marking Pieces / Reel S 15 k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions! Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-06-28 BAT24-02LS Single silicon RF Schottky diode Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list ....