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MJE13009G

ON Semiconductor
Part Number MJE13009G
Manufacturer ON Semiconductor
Description NPN Silicon Power Transistors
Published Feb 27, 2015
Detailed Description MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power ...
Datasheet PDF File MJE13009G PDF File

MJE13009G
MJE13009G


Overview
MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
Features • VCEO(sus) 400 V and 300 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, 100_C is 120 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter ...



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