SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-126 package ·DARLINGTON ...
SavantIC Semiconductor
Silicon
PNP Power
Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD985 2SD986
APPLICATIONS ·For use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2) PIN DESCRIPTION
1 Emitter
2
Collector;connected to mounting base
3 Base
Product Specification
2SB794 2SB795
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SB794 2SB795
Open emitter
VCEO
Collector-emitter voltage
2SB794 2SB795
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC) ICM Collector current-peak
PD Total power dissipation
Tj Junction temperature Tstg Storage temperature
Ta=25 TC=25
VALUE -60 -80 -60 -80 -8 -1.5 -3.0 1.0 10 150
-55~150
UNIT V
V V A A W
SavantIC Semiconductor
Silicon
PNP Power
Transistors
www.DataSheet4U.com
Product Specification
2SB794 2SB795
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter breakdown voltage
2SB794 2SB795
IC=-10mA ;IB=0
-60 -80
V
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA
-1.5 V
VBEsat
Base-emitter saturation voltage
IC=-1A ;IB=-1mA
-2.0 V
ICBO
Collector cut-off current
2SB794 VCB=-60V; IE=0 2SB795 VCB=-80V; IE=0
-1.0 µA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-2.0 mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
1000
h...