Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1816
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION The µPA1816 is a switching device which can be
driven directly by a 1.8 V power source. This device features a low on-state resistance and
excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on.
FEATURES • 1.8 V drive available • Low on-state resistance
RDS(on)1 = 15 mΩ MAX. (VGS = −4.5 V, ID = −4.5 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −4.5 A) RDS(on)3 = 22.5 mΩ MAX. (VGS = −2.5 V, ID = −4.5 A) RDS(on)4 = 41.5 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A) • Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
1.2 MAX. 1.0 ±0.05
0.25
14
3°
+5° –3°
0.1 ±0.05
0.5
0.6
+0.15 –0.1
3.15 ±0.15 3.0 ±0.1
6.4 ±0.2 4.4 ±0.1
1.0 ±0.2
0.145 ±0.055
ORDERING INFORMATION
PART NUMBER µPA1816GR-9JG
PACKAGE Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03 –0.08
0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Total Power Dissipation Note2
ID(DC) ID(pulse)
PT
Channel Temperature
Tch
Storage Temperature
Tstg
−12
m 8.0 m 9.0 m 36
2.0
150
−55 to +150
V V A A W °C °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G16252EJ1V0DS00 (1st edition) Date Published July 2002 NS CP(K) Printed in Japan
©
2002
µ PA1816
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance
Input Capacitance
IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss
VDS = −12 V, VGS = 0 V
VGS = m 8.0 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA VDS = −10 V, ID = −4.5 A VGS = −4.5 V, ID = −4.5 A VGS = −4.0 V, ID = −4.5 A VGS = −2.5 V, ID = −4.5 A VGS = −1.8 V, ID = −2.5 A VDS = −10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance Turn-on Delay Time Rise Time
Crss f = 1.0 MHz td(on) VDD = −10 V, ID = −4.5 A
tr VGS = −4.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge
tf QG VDD = −10 V QGS VGS = −4.0 V QGD ID = −9.0 A
Body Diode Forward Voltage
VF(S-D) IF = 9.0 A, VGS = 0 V
Reverse Recovery Time
trr IF = 9.0 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/ µs
MIN. TYP. MAX. UNIT
−0.45 −0.75
−1.0
m 10
−1.5
µA µA V
11 22
S
12.0 15 mΩ
12.5 16 mΩ
16.2 22.5 mΩ
23.7 41.5 mΩ
1570
pF
400 pF
240 pF
16 ns
132 ns
223 ns
295 ns
15 nC
3.0 nC
4.5 nC
0.82 V
490 ns
580 nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG PG.
VGS (−) 0
τ
τ = 1µs Duty Cycle ≤ 1%
RL VDD
VGS (−)
VGS
Wave Form
10% 0
90% VGS
VDS (−)
90%
VDS
VDS
Wave Form
0
td(on)
10% 10% tr td(off)
90% tf
ton toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = −2 mA
PG. 50 Ω
RL VDD
2 Data Sheet G16252EJ1V0DS
µ PA1816
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
2.5
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
100
80
60
40
20
0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C
2
1.5
1
0.5 Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
ID(pulse)
-10 ID(DC)
PW = 1 ms
ID - Drain Current - A
-1 RDS(on) Limited (VGS = −4.5 V) DC
10 ms 100 ms
-0.1 Single Pulse Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
-0.01
-0.1 -1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100
62.5°C/W
rth(ch-A) - Transient Thermal Resistance - °C/W
10
1 1m
10 m
Single Pulse Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
100 m
1
10
PW - Pulse Width - s
100 1000
Data Sheet G16252EJ1V0DS
3
ID - Drain Current - A
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
-40 Pulsed
−4.0 V
-30 VGS = −4.5 V
−2.5 V
-20 −1.8 V
-10
0 0 -0.2 -0.4 -0.6 -0.8 -1 VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -1
VDS = −10 V ID = −1.0 mA
-0.8
-0.6
ID - Drain Cu.