FX803

Ordering number:EN5053 FX803 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode (Twin type · Cathode Common) DC-DC Converter Features · Complex type of a low saturation voltage, high speed switching and large current NPN transistor and a fast recovery and low forward voltage Schottky barrier diode facilitating high-sensity mounting. · The FX803 is composed of 2 chips, one being equivalent to the 2SB1628 and the other the SB20W03P, placed in one package. Package Dimensions unit:mm 2126 [FX803] Electrical Connection 1:Base 2:Emitter 3:Anode1 4:Anode2 5:Cathode 6:Collector (Top view) 1:Base 2:Emitter 3:Anode1 4:Anode2 5:Cathode 6:Collector SANYO:XP6 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature [SBD] (Value per element) Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IO IFSM Tj Tstg (Total) 50Hz sine wave, 1cycle 30 35 2 4 10 –55 to +125 –55 to +125 V V A A A ˚C ˚C VCBO VCEO VEBO IC ICP IB PC Tj Mounted on ceramic board (750mm2×0.8mm) 1 unit 60 20 6 5 8 1 1.5 150 V V V A A A W ˚C Symbol Conditions Ratings Unit · Marking:803 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO O...