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FDN359BN Dataheets PDF



Part Number FDN359BN
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Logic Level PowerTrench MOSFET
Datasheet FDN359BN DatasheetFDN359BN Datasheet (PDF)

FDN359BN January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 2.7 A, 30 V. RDS(ON)= 0.0.

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FDN359BN January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 2.7 A, 30 V. RDS(ON)= 0.046 Ω @ VGS = 10 V RDS(ON)= 0.060 Ω @ VGS = 4.5 V • Very fast switching speed. • Low gate charge (5nC typical) • High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. DD SuperSOTTM-3 G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous (Note 1a) – Pulsed PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 359B FDN359BN 7’’ GS Ratings 30 ±20 2.7 15 0.5 0.46 −55 to +150 250 75 Tape width 8mm Units V V A W °C °C/W °C/W Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDN359BN Rev A(W) FDN359BN Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = ±20 V, VGS = 0 V TJ = -55OC VDS = 0 V On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current gFS Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 10 V, ID = 2.7 A VGS = 4.5 V, ID = 2.4 A VGS = 10 V, ID = 2.7 A, TJ = 125°C VGS = 10 V, VDS = 5 V VDS = 5V, ID = 2.7 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15 V, f = 1.0 MHz V GS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = 15V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω VDS = 15 V, VGS = 5 V ID = 2.7 A, 30 1 15 V 21 mV/°C 1 10 ±100 µA µA nA 1.8 3 V –4 mV/°C 0.026 0.032 0.033 0.046 0.060 0.075 11 Ω A S 485 650 105 140 65 100 1.8 pF pF pF Ω 7 14 ns 5 10 ns 20 35 ns 2 4 ns 5 7 nC 1.3 nC 1.8 nC FDN359BN Rev A(W) FDN359BN Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward VGS = 0 V, IS = 0.42 A (Note 2) Voltage trr Diode Reverse Recovery Time IF = 2.7A, diF/dt = 100 A/µs Qrr Diode Reverse Recovery Charge 0.42 0.7 1.2 12 20 35 A V ns nC otes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDN359BN Rev A(W) FDN359BN Typical Characteristics ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 VGS = 10V 12 4.5V 9 4.0V 6 3.5V 3.0V 3 2.5V 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 VGS = 3.0V 2.2 1.8 1.4 3.5V 4.0V 4.5V 5.0V 6.0 1 10.0V 0.6 0 3 6 9 12 ID, DRAIN CURRENT (A) 15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.2 ID = 2.7A VGS = 10V 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. RDS(ON), ON-RESISTANCE (OHM) 0.08 0.06 ID = 1.35A 0.04 TA = 125oC TA = 25oC 0.02 2 468 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 VDS = 5V 12 9 6 TA = 125oC -55oC 3 25oC 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 IS, REVERSE DRAIN CURRENT (A) 100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 TA = 125oC 25oC -55oC 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAG.


EL2099 FDN359BN AK4536


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