Document
FDN359BN
January 2006
FDN359BN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features • 2.7 A, 30 V.
RDS(ON)= 0.046 Ω @ VGS = 10 V
RDS(ON)= 0.060 Ω @ VGS = 4.5 V
• Very fast switching speed.
• Low gate charge (5nC typical)
• High performance version of industry standard
SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.
DD
SuperSOTTM-3
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous
(Note 1a)
– Pulsed
PD Maximum Power Dissipation
(Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
359B
FDN359BN
7’’
GS
Ratings
30 ±20 2.7 15 0.5 0.46 −55 to +150
250 75
Tape width 8mm
Units
V V A
W
°C
°C/W °C/W
Quantity 3000 units
©2006 Fairchild Semiconductor Corporation
FDN359BN Rev A(W)
FDN359BN
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS ∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = ±20 V,
VGS = 0 V TJ = -55OC
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th) ∆TJ
RDS(on)
Gate Threshold Voltage Temperature Coefficient
Static Drain–Source On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V,
ID = 2.7 A
VGS = 4.5 V, ID = 2.4 A
VGS = 10 V, ID = 2.7 A, TJ = 125°C
VGS = 10 V,
VDS = 5 V
VDS = 5V,
ID = 2.7 A
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge
(Note 2)
VDD = 15V, VGS = 10 V,
ID = 1 A, RGEN = 6 Ω
VDS = 15 V, VGS = 5 V
ID = 2.7 A,
30 1 15
V
21 mV/°C
1 10 ±100
µA µA nA
1.8 3
V
–4 mV/°C
0.026 0.032 0.033
0.046 0.060 0.075
11
Ω
A S
485 650 105 140 65 100 1.8
pF pF pF Ω
7 14 ns 5 10 ns 20 35 ns 2 4 ns 5 7 nC 1.3 nC 1.8 nC
FDN359BN Rev A(W)
FDN359BN
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 0.42 A (Note 2)
Voltage
trr
Diode Reverse Recovery Time
IF = 2.7A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge
0.42 0.7 1.2
12 20 35
A V
ns nC
otes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN359BN Rev A(W)
FDN359BN
Typical Characteristics
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
15 VGS = 10V
12 4.5V
9
4.0V
6
3.5V
3.0V
3
2.5V 0
0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.6 VGS = 3.0V
2.2
1.8
1.4 3.5V
4.0V
4.5V
5.0V 6.0
1
10.0V
0.6 0
3 6 9 12 ID, DRAIN CURRENT (A)
15
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.2 ID = 2.7A VGS = 10V
1.1
1
0.9
0.8
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with Temperature.
RDS(ON), ON-RESISTANCE (OHM)
0.08 0.06
ID = 1.35A
0.04
TA = 125oC
TA = 25oC
0.02 2
468 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
15 VDS = 5V
12
9
6
TA = 125oC
-55oC
3
25oC
0
1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
4
IS, REVERSE DRAIN CURRENT (A)
100 VGS = 0V
10
1
0.1
0.01
0.001
0.0001 0
TA = 125oC
25oC
-55oC
0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAG.