Si7252DP

New Product Si7252DP Vishay Siliconix Dual N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.017 at VGS = 10 V 100 0.018 at VGS = 7.5 V 0.020 at VGS = 6 V ID (A)a 36.7 35.7 33.9 Qg (Typ.) 12.2 nC PowerPAK SO-8 6.15 mm D1 8 D1 7 D2 6 D2 5 S1 1 G1 2 5.15 mm S2 3 G2 4 Bottom View Ordering Information: Si7252DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Primary Side Switching Synchronous Rectification DC/AC Inverters D1 D2 G1 N-Channel MOSFET S1 G2 N-Channel MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C ID Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 85 °C TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e IDM IS IAS EAS PD TJ, Tstg Limit 100 ± 20 36.7 29.2 10.1b, c 8b, c 80 38 2.9b, c 20 20 46 29 3.5b, c 2.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f...