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BUK752R7-30B Dataheets PDF



Part Number BUK752R7-30B
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet BUK752R7-30B DatasheetBUK752R7-30B Datasheet (PDF)

BUK752R7-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for sta.

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BUK752R7-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage - - 30 V ID drain current VGS = 10 V; Tmb = 25 °C; [1] - - 75 A see Figure 1; see Figure 3 Ptot total power Tmb = 25 °C; see Figure 2 dissipation - - 300 W Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; - 2.3 2.7 mΩ see Figure 11; see Figure 12 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - - 2.3 J QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 24 V; - 29 - nC Tj = 25 °C; see Figure 13 [1] Continuous current is limited by package. NXP Semiconductors BUK752R7-30B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G gate D drain S source D mounting base; connected to drain Simplified outline mb Graphic symbol D G mbb076 S 3. Ordering information 123 SOT78 (TO-220AB) Table 3. Ordering information Type number Package Name BUK752R7-30B TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 BUK752R7-30B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 NXP Semiconductors BUK752R7-30B N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Min Typ Max Unit - - 30 V - - 30 V -20 - 20 V [1] - - 241 A Tmb = 100 °C; VGS = 10 V; see Figure 1 [2] - - 75 A Tmb = 25 °C; VGS = 10 V; see Figure 1; [2] - - 75 A see Figure 3 IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - - 967 A Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode Tmb = 25 °C; see Figure 2 --55 -55 - 300 W 175 °C 175 °C IS source current Tmb = 25 °C [1] - - 241 A [2] - - 75 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - - 967 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - - 2.3 J [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. BUK752R7-30B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 NXP Semiconductors 250 ID (A) 200 03ng51 150 100 50 Capped at 75 A due to package 0 0 50 100 150 200 Tmb (°C) BUK752R7-30B N-channel TrenchMOS standard level FET 120 Pder (%) 80 03na19 40 0 0 50 100 150 200 Tmb (°C) Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 104 ID (A) 103 102 10 Limit RDSon = VDS/ID Capped at 75 A due to package DC 03ng27 tp = 10 μs 100 μs 1 ms 10 ms 100 ms 1 10−1 1 10 102 VDS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK752R7-30B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 NXP Semiconductors BUK752R7-30B N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 vertical in still air Min Typ Max Unit - - 0.5 K/W - 60 - K/W 1 Zth(j-mb) (K/W) δ = 0.5 10−1 10−2 0.2 0.1 0.05 0.02 03ng28 P tp δ= T Single Shot 10−3 10−6 10−5 10−4 10−3 10−2 tp T t 10−1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mo.


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