Document
BUK752R7-30B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V loads Automotive systems
General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
- - 30 V
ID
drain current
VGS = 10 V; Tmb = 25 °C;
[1] - - 75 A
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
- - 300 W
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C; - 2.3 2.7 mΩ see Figure 11; see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
- - 2.3 J
QGD
gate-drain charge VGS = 10 V; ID = 25 A; VDS = 24 V; - 29 - nC Tj = 25 °C; see Figure 13
[1] Continuous current is limited by package.
NXP Semiconductors
BUK752R7-30B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb
Pinning information Symbol Description G gate D drain S source D mounting base; connected to
drain
Simplified outline
mb
Graphic symbol
D
G mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
BUK752R7-30B
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
Version SOT78
BUK752R7-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 June 2010
© NXP B.V. 2010. All rights reserved.
2 of 14
NXP Semiconductors
BUK752R7-30B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID
Parameter drain-source voltage drain-gate voltage gate-source voltage drain current
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3
Min Typ Max Unit
- - 30 V
- - 30 V
-20 -
20 V
[1] - - 241 A
Tmb = 100 °C; VGS = 10 V; see Figure 1 [2] - - 75 A
Tmb = 25 °C; VGS = 10 V; see Figure 1; [2] - - 75 A see Figure 3
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
see Figure 3
- - 967 A
Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode
Tmb = 25 °C; see Figure 2
--55 -55 -
300 W 175 °C 175 °C
IS
source current
Tmb = 25 °C
[1] - - 241 A
[2] - - 75 A
ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C
- - 967 A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
- - 2.3 J
[1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package.
BUK752R7-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 June 2010
© NXP B.V. 2010. All rights reserved.
3 of 14
NXP Semiconductors
250 ID (A)
200
03ng51
150
100
50 Capped at 75 A due to package
0 0 50 100 150 200 Tmb (°C)
BUK752R7-30B
N-channel TrenchMOS standard level FET
120
Pder (%)
80
03na19
40
0 0 50 100 150 200 Tmb (°C)
Fig 1. Normalized continuous drain current as a function of mounting base temperature
Fig 2. Normalized total power dissipation as a function of mounting base temperature
104 ID (A)
103
102
10
Limit RDSon = VDS/ID
Capped at 75 A due to package
DC
03ng27
tp = 10 μs 100 μs 1 ms 10 ms 100 ms
1 10−1
1
10 102 VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK752R7-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 June 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
NXP Semiconductors
BUK752R7-30B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions see Figure 4
vertical in still air
Min Typ Max Unit - - 0.5 K/W
- 60 - K/W
1
Zth(j-mb) (K/W)
δ = 0.5
10−1 10−2
0.2 0.1 0.05 0.02
03ng28
P
tp δ=
T
Single Shot
10−3 10−6
10−5
10−4
10−3
10−2
tp T
t
10−1 tp (s)
1
Fig 4. Transient thermal impedance from junction to mo.