1Gb DDR3 SDRAM A-Die
1Gb DDR3 SDRAM A-Die
NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP
Feature
1.5V ± 0.075V (JEDEC Standard Power Supply) ...
Description
1Gb DDR3 SDRAM A-Die
NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP
Feature
1.5V ± 0.075V (JEDEC Standard Power Supply) 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9 Programmable Additive Latency: 0, CL-1, CL-2 Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8 8 bit prefetch architecture Output Driver Impedance Control
Write Leveling OCD Calibration Dynamic ODT (Rtt_Nom & Rtt_WR) Auto Self-Refresh Self-Refresh Temperature Partial Array Self-Refresh RoHS Compliance Packages:
78-Ball BGA for x4 & x8 components 96-Ball BGA for x16 components
Description
The 1Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 1,073,741,824 bits. It is internally configured as an octal-bank DRAM.
The 1Gb chip is organized as 32Mbit x 4 I/O x 8, 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.
These devices operate with a singl...
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