Transistors
2SB1462L
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SD2216L
32
Unit: mm...
Transistors
2SB1462L
Silicon
PNP epitaxial planer type
For general amplification Complementary to 2SD2216L
32
Unit: mm
0.020±0.010
0.80±0.05
I Features
High foward current transfer ratio hFE Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature
VCBO VCEO VEBO ICP
IC PC Tj Tstg
−60 −50 −7 −200 −100 150 125 −55 to +125
Note) *: Printed circuit board copper foil for collector portion area: 20.0 mm2 or more, thickness: 1.6 mm
Unit V V V mA mA
mW °C °C
0.05±0.03
4 1.00±0.05
1
0.60±0.05
41
0.20±0.03
0.50
3 0.30±0.03
Marking Symbol: J
2 0.05±0.03 0.60
1: Base 2: Emitter 3: Collector 4: Collector ML4-N1 Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Collector output capacitance Transition frequency
ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) Cob fT
VCB = −20 V, IE = 0 VCE = −10 V, IB = 0 IC = −10 µA, IE = 0 IC = −100 µA, IB = 0 IE = −10 µA, IC = 0 VCE = −10 V, IC = −2 mA IC = −100 mA, IB = −10 mA VCB = −10 V, IE = 0, f = 1 MHz VC...
