Document
PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET FEATURES
• 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
TO-220AB / ITO-220AB TO-220AB
• Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives
3 2
S
1D
G
ITO-220AB
1
2
3 D
S
G
MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2 Drain
ORDERING INFORMATION
TYPE PJP10N65
MARKING P10N65
PJF10N65
F10N65
PACKAGE TO-220AB ITO-220AB
PACKING 50PCS/TUBE 50PCS/TUBE
1 Gate
3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol PJP10N65 PJF10N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 10
10
Pulsed Drain Current 1)
Maximum Power Dissipation Derating Factor
TA= 2 5 OC
IDM PD
40
156 1.25
40
50 0.4
Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e
Avalanche Energy with Single Pulse IAS=10A, VDD=90V, L=13mΗ Junction-to-Case Thermal Resistance
TJ,TSTG E AS RθJC
-55 to +150 750
0.8 2.5
Junction-to Ambient Thermal Resistance Note : 1. Maximum DC current limited by the package
RθJA
62.5
100
Uni ts V V A A W OC mJ
OC /W OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
PAGE . 1
PJP10N65 / PJF10N65
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Static
Symbol
Te s t C o nd i ti o n
Drain-Source Breakdown Voltag e
Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain C urre nt Gate Body Leakage
Dynamic
B V DSS V GS(th) R D S ( o n) I DSS I GSS
VGS=0V, I D=250uA VDS=VGS, I D=250uA
VGS= 10V, I D= 5.0A VDS=650V, VGS=0V VGS=+30V, VDS=0V
To ta l Ga te C ha rg e Gate-Source Charge Gate-Drain Charge Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Input Capacitance Output Capacitance Reverse Tra nsfer C a p a c i ta nc e
Source-Drain Diode
Qg Q gs Q gd t d(on) tr t d(off) tf C iss C oss C rss
V DS=520V, ID=10A , V GS= 1 0 V
VDD=325V, ID =10A V GS=1 0 V, RG=25Ω
VDS=25V, VGS=0V f=1.0MHZ
Max. Diode Forward Current
IS
-
Max.Pulsed Source Current
I SM
-
Diode Forward Voltage
V SD
IS=10A , V GS=0V
Re ve rse Re co ve ry Ti me Reverse Recovery Charge
t rr Q rr
V GS=0V, IF=10A d i /d t=1 0 0 A /us
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Mi n. Typ . Ma x. Uni ts
650 -
-V
2.0 - 4.0 V
- 0.85 1.0 Ω
- - 10 uA - - +100 nΑ
-
38.6
52
- 8.4 - nC
- 9.8 -
- 14.8 22
- 22.6 36
ns
-
48.2
90
-
26.8
42
- 1450 2020
- 120 165 p F
- 12 16
- - 10 A - - 40 A - - 1.4 V - 450 - ns - 4.2 - uC
STAD-DEC.25.2009
PAGE . 2
PJP10N65 / PJF10N65
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
ID - Drain-to-Source Cu.