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F10N65 Dataheets PDF



Part Number F10N65
Manufacturers Pan Jit International
Logo Pan Jit International
Description 650V N-Channel Enhancement Mode MOSFET
Datasheet F10N65 DatasheetF10N65 Datasheet (PDF)

PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MI.

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PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION TYPE PJP10N65 MARKING P10N65 PJF10N65 F10N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE 1 Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Symbol PJP10N65 PJF10N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS +30 Continuous Drain Current ID 10 10 Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TA= 2 5 OC IDM PD 40 156 1.25 40 50 0.4 Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e Avalanche Energy with Single Pulse IAS=10A, VDD=90V, L=13mΗ Junction-to-Case Thermal Resistance TJ,TSTG E AS RθJC -55 to +150 750 0.8 2.5 Junction-to Ambient Thermal Resistance Note : 1. Maximum DC current limited by the package RθJA 62.5 100 Uni ts V V A A W OC mJ OC /W OC /W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-DEC.25.2009 PAGE . 1 PJP10N65 / PJF10N65 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) Parameter Static Symbol Te s t C o nd i ti o n Drain-Source Breakdown Voltag e Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain C urre nt Gate Body Leakage Dynamic B V DSS V GS(th) R D S ( o n) I DSS I GSS VGS=0V, I D=250uA VDS=VGS, I D=250uA VGS= 10V, I D= 5.0A VDS=650V, VGS=0V VGS=+30V, VDS=0V To ta l Ga te C ha rg e Gate-Source Charge Gate-Drain Charge Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Input Capacitance Output Capacitance Reverse Tra nsfer C a p a c i ta nc e Source-Drain Diode Qg Q gs Q gd t d(on) tr t d(off) tf C iss C oss C rss V DS=520V, ID=10A , V GS= 1 0 V VDD=325V, ID =10A V GS=1 0 V, RG=25Ω VDS=25V, VGS=0V f=1.0MHZ Max. Diode Forward Current IS - Max.Pulsed Source Current I SM - Diode Forward Voltage V SD IS=10A , V GS=0V Re ve rse Re co ve ry Ti me Reverse Recovery Charge t rr Q rr V GS=0V, IF=10A d i /d t=1 0 0 A /us NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. Mi n. Typ . Ma x. Uni ts 650 - -V 2.0 - 4.0 V - 0.85 1.0 Ω - - 10 uA - - +100 nΑ - 38.6 52 - 8.4 - nC - 9.8 - - 14.8 22 - 22.6 36 ns - 48.2 90 - 26.8 42 - 1450 2020 - 120 165 p F - 12 16 - - 10 A - - 40 A - - 1.4 V - 450 - ns - 4.2 - uC STAD-DEC.25.2009 PAGE . 2 PJP10N65 / PJF10N65 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) ID - Drain-to-Source Cu.


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