C3055

SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Product Specification 2SC3055 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICP PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector PW-300µs,Duty cycle-10% TC=25 VALUE 450 400 7 2 4 15 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=< V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCE(sat) Collector-emitter saturation voltage IC=0.5A; IB=0.1A VBE(sat) Base-emitter saturation voltage IC=0.5A; IB=0.1A ICBO Collector cut-off current VCB=400V ;IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain IC=1A ; VCE=5V fT Transition frequency IC=0.2A ; VCE=10V COB Output capacitance f=1MHz ; VCB=10V Product Specification 2SC3055 MIN TYP. MAX UNIT 40...