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D1187

Part Number	D1187
Manufacturer	Inchange Semiconductor
Description	2SD1187
Published	Feb 22, 2015
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 DESCRIPTION ·Collector-Emitt...
Datasheet	D1187 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.
5V(Max.
) @ IC= 6A ·High Power Dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 10 A IBB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2A 80 ...

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