TPC8214-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8214-H
High-Efficie...
TPC8214-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8214-H
High-Efficiency DC/DC Converter Applications CCFL Inverters
Unit: mm
Small footprint due to a small and thin package
High-speed switching
Small gate charge: QSW = 2.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.) High forward transfer admittance: |Yfs| =5.4 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Drain power dissipation
Single-device operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Drain power dissipation
Single-device operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single-pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy (Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD (1)
PD (2)
PD (1)
PD 2)
EAS IAR EAR Tch Tstg
100 100 ±20 2.2 8.8 1.5
1.1
0.75
0.45
3.9 2.2 0.026 150 −55~150
V V V A
W
W
mJ A mJ ℃ ℃
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.085 g (typ.)
Circuit Configuration
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the applica...