TPC8214-H

TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DC／DC Converter Applications CCFL Inverters Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.) High forward transfer admittance: |Yfs| =5.4 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC Pulse (Note 1) (Note 1) Drain power dissipation Single-device operation (Note 3a) (t = 10 s) Single-device value (Note 2a) at dual operation (Note 3b) Drain power dissipation Single-device operation (Note 3a) (t = 10 s) Single-device value (Note 2b) at dual operation (Note 3b) Single-pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD 2) EAS IAR EAR Tch Tstg 100 100 ±20 2.2 8.8 1.5 1.1 0.75 0.45 3.9 2.2 0.026 150 −55～150 V V V A W W mJ A mJ ℃ ℃ JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.085 g (typ.) Circuit Configuration Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the applica...