IRFD9120

Power MOSFET IRFD9120, SiHFD9120 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 18 3.0 9.0 Single 0.60 S HVMDIP G S G D D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175 °C Operating Temperature Fast Switching Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. HVMDIP IRFD9120PbF SiHFD9120-E3 IRFD9120 SiHFD9120 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at - 10 V TA = 25 °C TA = 100 °C TA = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak T...