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MP2510 Dataheets PDF



Part Number MP2510
Manufacturers UTC
Logo UTC
Description PNP TRANSISTOR
Datasheet MP2510 DatasheetMP2510 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP TRANSISTOR  DESCRIPTION The UTC MP2510 is a PNP transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. The UTC MP2510 is suitable for automobile power amplifiers, etc.  FEATURES * High DC current gain (Min = 40@VCE = 4V, IC = 12A) * High collector-emitter breakdown voltage (Min = -100V)  ORDERING INFORMATION O.

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UNISONIC TECHNOLOGIES CO., LTD MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP TRANSISTOR  DESCRIPTION The UTC MP2510 is a PNP transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. The UTC MP2510 is suitable for automobile power amplifiers, etc.  FEATURES * High DC current gain (Min = 40@VCE = 4V, IC = 12A) * High collector-emitter breakdown voltage (Min = -100V)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MP2510L-x-T3P-T MP2510G-x-T3P-T Pin Assignment: B: Base C: Collector E: Emitter Package TO-3P Pin Assignment 123 BCE Packing Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-021.a MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Collector Current IC -25 A Base Current Collector Power Dissipation (TC=25°C) IB Pc -5 A 125 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA =25°C) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Voltage DC Current Gain (Note 1) Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Cut-Off Frequency Output Capacitance  CLASSIFICATION OF hFE SYMBOL TEST CONDITIONS ICBO VCB=100V IEBO VEB=6V V(BR)CEO IC=50mA hFE VCE=4V, IC=12A VCE(sat) IC=12A, IB=1.2A VBE(ON) VCE=4V, IC=12A fT VCE=12V, IE=-1A Cob VCB=10V, IE=0A, f=1MHz MIN TYP MAX UNIT -10 µA -10 µA -100 V 40 120 -1.5 V -1.8 V 20 MHz 200 pF RANK hFE1 R 40~80 O 60~120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R214-021.a MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R214-021.a .


UDN-2845B MP2510 F2N60


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