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http://www.fujielectric.com/products/semiconductor/
FGW15N120VD
Discrete IGBT
Discrete IGBT (High-Speed V series) 1200V / 15A
Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply
Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Equivalent circuit
Items Collector-Emitter voltage Gate-Emitter voltage
DC Collector Current
Pulsed Collector Current Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Symbols VCES VGES IC@25 IC@100 ICP -
IF@25
IF@100
IFP
Short Circuit Withstand Time tSC
IGBT Max. Power Dissipation
PD_IGBT
FWD Max. Power Dissipation
PD_FWD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics 1200 ±20 28 15 30 30 26 15 30
10
155 95 -40~+175 -55~+175
Units
Remarks
V
V
A TC=25°C, Tj=150°C
A TC=100°C, Tj=150°C
A Note *1
A VCE≤1200V, Tj≤175°C
A
A
A Note *1
μs
VCC≤640V, VGE=15V Tj≤150°C
W
TC=25°C TC=25°C
°C
°C
Gate
Collector Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy
Turn-Off Energy
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy
Turn-Off Energy
Forward Voltage Drop
Diode Reverse Recovery Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbols V(BR)CES ICES IGES VGE (th) VCE (sat) Cies Coes Cres
QG
td(on) tr td(off) tf Eon
Eoff
td(on) tr td(off) tf Eon
Eoff
VF
trr1
trr2
Qrr
Conditions
IC = 50μA, VGE = 0V
VCE = 1200V, VGE = 0V
Tj=25°C Tj=175°C
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 15mA
VGE = +15V, IC = 15A
Tj=25°C Tj=175°C
VCE=25V
VGE=0V
f=1MHz
VCC = 600V
IC = 15A
VGE = 15V
Tj = 25°C
VCC = 600V
IC = 15A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj = 175°C
VCC = 600V
IC = 15A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
IF=15A
Tj=25°C Tj=175°C
VCC=30V
IF = 1.5A
-di/dt=200A/µs
VCC=600V
IF=15A
-diF/dt=200A/µs
Tj=25°C
Characteristics
min. typ. max.
1200
-
-
- - 250
- -2
- - 200
6.0 6.5 7.0
- 1.85 2.4
- 2.4 -
- 1015 -
- 58 -
- 47 -
- 150 -
- 27 - 20 - 180 - 45 - 1.1 -
- 0.8 -
- 28 - 22 - 245 - 75 - 1.7 -
- 1.4 -
- 1.7 2.21 - 1.8 -
- 56 73
- 0.26 - 0.85 -
Unit V µA mA nA V V
pF
nC
ns
mJ
ns
mJ V V ns µs µC
1
FGW15N120VD
Items Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal resistance
Items Thermal Resistance, Junction-Ambient Thermal Resistance, IGBT Junction to Case Thermal Resist.