DatasheetsPDF.com

FGW15N120VD Dataheets PDF



Part Number FGW15N120VD
Manufacturers Fuji Electric
Logo Fuji Electric
Description Discrete IGBT
Datasheet FGW15N120VD DatasheetFGW15N120VD Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ FGW15N120VD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 15A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter voltage Gate-Emit.

  FGW15N120VD   FGW15N120VD



Document
http://www.fujielectric.com/products/semiconductor/ FGW15N120VD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 15A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter voltage Gate-Emitter voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current Symbols VCES VGES IC@25 IC@100 ICP - IF@25 IF@100 IFP Short Circuit Withstand Time tSC IGBT Max. Power Dissipation PD_IGBT FWD Max. Power Dissipation PD_FWD Operating Junction Temperature Tj Storage Temperature Tstg Characteristics 1200 ±20 28 15 30 30 26 15 30 10 155 95 -40~+175 -55~+175 Units Remarks V V A TC=25°C, Tj=150°C A TC=100°C, Tj=150°C A Note *1 A VCE≤1200V, Tj≤175°C A A A Note *1 μs VCC≤640V, VGE=15V Tj≤150°C W TC=25°C TC=25°C °C °C Gate Collector Emitter Note *1 : Pulse width limited by Tjmax. Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Forward Voltage Drop Diode Reverse Recovery Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbols V(BR)CES ICES IGES VGE (th) VCE (sat) Cies Coes Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff VF trr1 trr2 Qrr Conditions IC = 50μA, VGE = 0V VCE = 1200V, VGE = 0V Tj=25°C Tj=175°C VCE = 0V, VGE = ±20V VCE = +20V, IC = 15mA VGE = +15V, IC = 15A Tj=25°C Tj=175°C VCE=25V VGE=0V f=1MHz VCC = 600V IC = 15A VGE = 15V Tj = 25°C VCC = 600V IC = 15A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD reverse recovery. Tj = 175°C VCC = 600V IC = 15A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD reverse recovery. IF=15A Tj=25°C Tj=175°C VCC=30V IF = 1.5A -di/dt=200A/µs VCC=600V IF=15A -diF/dt=200A/µs Tj=25°C Characteristics min. typ. max. 1200 - - - - 250 - -2 - - 200 6.0 6.5 7.0 - 1.85 2.4 - 2.4 - - 1015 - - 58 - - 47 - - 150 - - 27 - 20 - 180 - 45 - 1.1 - - 0.8 - - 28 - 22 - 245 - 75 - 1.7 - - 1.4 - - 1.7 2.21 - 1.8 - - 56 73 - 0.26 - 0.85 - Unit V µA mA nA V V pF nC ns mJ ns mJ V V ns µs µC 1 FGW15N120VD Items Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal resistance Items Thermal Resistance, Junction-Ambient Thermal Resistance, IGBT Junction to Case Thermal Resist.


FGW50N60VD FGW15N120VD FGW25N120VD


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)