FGW30N120H

http://www.fujielectric.com/products/semiconductor/ FGW30N120H Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 30A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Symbols VCES VGES IC@25 IC@100 ICP - Short Circuit Withstand Time tSC Maximum Power Dissipation PD Operating Junction Temperature Tj Storage Temperature Tstg Characteristics 1200 ±20 53 30 90 90 5 260 -40 ~ +175 -55 ~ +175 Units Remarks V V A TC=25°C, Tj=150°C A TC=100°C, Tj=150°C A Note *1 A VCE≤1200V, Tj≤175°C μs VCC≤600V, VGE=12V Tj≤150°C W TC=25°C °C °C Note *1 : Pulse width limited by Tjmax. Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Thermal resistanc...