Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
FGW30N120H
Discrete IGBT
Discrete IGBT (High-Speed V series) 1200...
Description
http://www.fujielectric.com/products/semiconductor/
FGW30N120H
Discrete IGBT
Discrete IGBT (High-Speed V series) 1200V / 30A
Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply Power coditionner Power factor correction circuit
Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items Collector-Emitter voltage Gate-Emitter voltage
DC Collector Current
Pulsed Collector Current Turn-Off Safe Operating Area
Symbols VCES VGES IC@25 IC@100 ICP -
Short Circuit Withstand Time tSC
Maximum Power Dissipation
PD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics 1200 ±20 53 30 90 90
5
260 -40 ~ +175 -55 ~ +175
Units
Remarks
V
V
A TC=25°C, Tj=150°C
A TC=100°C, Tj=150°C
A Note *1
A VCE≤1200V, Tj≤175°C
μs
VCC≤600V, VGE=12V Tj≤150°C
W TC=25°C
°C
°C
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy
Turn-Off Energy
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy
Turn-Off Energy
Thermal resistanc...
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