FGW15N120HD

http://www.fujielectric.com/products/semiconductor/ FGW15N120HD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 15A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter Voltage Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current Short Circuit Withstand Time IGBT Max. Power Dissipation FWD Max. Power Dissipation Operating Junction Temperature Storage Temperature Symbols VCES VGES IC@25 IC@100 ICP IF@25 IF@100 IFP tSC PD_IGBT PD_FWD Tj Tstg Characteristics 1200 ±20 31 15 45 45 22 12 45 5 155 75 -40 ~ +175 -55 ~ +175 Units Remarks V V A TC=25°C,Tj=150°C A TC=100°C,Tj=150°C A Note *1 A VCE≤1200V,Tj≤175°C A A A Note *1 µs VCC≤600V,VGE=12V Tj≤150°C W TC=25°C TC=25°C °C °C Gate Collector Emitter Note *1 : Pulse width limited by Tjmax. Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise ...