FX602

Ordering number:EN4885 FX602 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features · Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting. · The FX602 is formed with two chips, each being equivalent to the 2SK2152, placed in one package. · Matched pair characteristics. Package Dimensions unit:mm 2120 [FX602] 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD PT Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C, 1unit Mounted on ceramic board (750mm2×0.8mm) 1unit Mounted on ceramic board (750mm2×0.8mm) Conditions Ratings 20 ±15 2 8 6 1.5 2 150 –55 to +150 Unit V V A A W W W ˚C ˚C · Marking:602 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/71095MO (KOTO) TA-0108 No.4885-1/4 FX602 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter D-S Breakdown Voltage G-S Breakdown Voltage Zero-Gate Voltage Dra...