HF05D060ACE

PD - 94412A HF05D060ACE Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • Benchmark Efficiency for Motor Control Applications • Rugged Transient Performance • Low EMI • Excellent Current Sharing in Parallel Operation • Qualified for Industrial Market Hexfred Die in Wafer Form 600V IF(nom)=5A VF(typ)= 1.15V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer Reference Standard IR Package Part: IRGS10B60KD Parameter Electrical Characteristics (Wafer Form) Description Guaranteed (min, max) Test Conditions VF Forward Voltage Drop BVR Reverse Breakdown Voltage IRM Reverse Leakage Current 0.8V min, 1.05V max 600V min 10µA max IC = 1A, TJ = 25°C TJ = 25°C, IR = 1mA TJ = 25°C, VR = 600V Mechanical Data Nominal Backmetal Composition, (Thickness) Cr (0.1µm)- NiV (0.2µm) - Ag (0.25µm) Nominal Front Metal Composition, (Thickness) 99% Al/1% Si, (3µm) Dimensions 0.075'' x 0.076" Wafer Diameter 150mm, with std. < 100 > flat Wafer Thickness, Tolerance 376µm, +/-15µm Relevant Die Mechanical Dwg. Number 01-5507 Minimum Street Width 125µm Reject Ink Dot Size 0.25mm diameter minimum Ink Dot Location Consistent throughout same wafer lot Recommended Storage Environment Store in original container, in dessicated nitrogen, with no contamination Recommended Die Attach Conditions For optimum electrical results, die attach temperature should not exceed 300°C Die Outline www.irf.com 1 07/01/04 100 0 -100 -2...