A1300

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) · Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg -20 -20 -10 -6 -2 -5 -0.2 750 150 -55~150 Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max) Unit V V V A A mW °C °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = -20 V, IE = 0 IEBO VEB = -6 V, IC = 0 V (BR) CEO IC = -10 mA, IB = 0 V (BR) EBO IE = -1 mA, IC = 0 hFE (1) VCE = -1 V, IC = -0.5 A (Note 2) hFE (2) VCE (sat) VBE fT Cob VCE = -1 V, IC = -4 A IC = -2 A, IB = -50 mA VCE = -1 V, IC = -2 A VCE = -1 V, IC = -0.5 A VCB = -10 V, ...