MJE2955T, 3055T
Complementary Power Transistors
Complementary Silicon Power Transistors are designed for use in general-...
MJE2955T, 3055T
Complementary Power
Transistors
Complementary Silicon Power
Transistors are designed for use in general-purpose amplifier and switching applications.
Features:
Power dissipation-PD = 75W at TC = 25°C. DC current gain hFE = 20 (Minimum) at IC = 4.0A. VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case).
Dimensions Minimum Maximum
A
14.68
15.31
B 9.78 10.42
C 5.01 6.52
D
13.06
14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
PNP MJE2955T
NPN MJE3055T
10 Ampere Complemetary Silicon
Power
Transistors 60 Volts 75 Watts
TO-220
Page 1
31/05/05 V1.0
MJE2955T, 3055T
Complementary Power
Transistors
Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current-Continuous
Base Current Total Power Dissipation at TC = 25°C
Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristic
Characteristic Thermal Resistance Junction to Case
Symbol
VCEO VCBO VEBO
Rating 60 70 5.0
IC 10
IB PD TJ, TSTG
6.0
75 0.6
-55 to +150
Symbol Rθjc
Maximum 1.67
Unit
V
A
W W/°C
°C
Unit °C/W
Figure - 1 Power Derating
Page 2
31/05/05 V1.0
MJE2955T, 3055T
Complementary Power
Transistors
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Minimum
Off Characteristics
Collector-Emitter Susta...
