B600

SavantIC Semiconductor wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors Product Specification 2SB600 DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE -200 -200 -5 -10 200 150 -55~200 UNIT V V V A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A ICBO Collector cut-off current VCB=-200V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-2A ; VCE=-5V fT Transition frequency IC=-0.5A ; VCE=-10V Product Specification 2SB600 MIN TYP. MAX UNIT -200 V -5 V -1.5 V -2.0 V -0.1 mA -0.1 mA 20 4 MHz 2 SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Spec...