FX50SMJ-03

P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX50SMJ-03 HIGH-SPEED SWITCHING USE FX50SMJ-03 OUTLINE DRAWING 15.9 max Dimensions in mm 4.5 1.5 4 2 2 4 20.0 φ 3.2 5.0 19.5 min 4.4 G 0.6 2.8 1.0 1 2 3 5.45 5.45 4 3 4V DRIVE VDSS ............................................................... –30V rDS (ON) (MAX) ................................................ 35mΩ ID .................................................................... –50A Integrated Fast Recovery Diode (TYP.) ...........55ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 2 4 GATE DRAIN SOURCE DRAIN TO-3P MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings –30 ±20 –50 –200 –50 –50 –200 70 –55 ~ +150 –55 ~ +150 Unit V V A A A A A W °C °C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 4.8 P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX50SMJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (...