HIGH-SPEED SWITCHING USE
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Description
P
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MITSUBISHI Pch POWER MOSFET
FX50KMJ-03
HIGH-SPEED SWITCHING USE
FX50KMJ-03
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
6.5 ± 0.3
3 ± 0.3
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
1
2 3
3
4V DRIVE VDSS ............................................................... –30V rDS (ON) (MAX) ................................................ 35mΩ ID .................................................................... –50A Integrated Fast Recovery Diode (TYP.) ...........55ns Viso ................................................................................ 2000V
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
2.6 ± 0.2
1
1 GATE 2 DRAIN 3 SOURCE
2
TO-220FN
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V
Conditions
Ratings –30 ±20 –50 –200 –50 –50 –200 30 –55 ~ +150 –55 ~ +150 2000 2.0
4.5 ± 0.2
Unit V V A A A A A W °C °C V g Jan.1999
Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight
AC for 1minute, Terminal to case Typical value
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