INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD111
DESCRIPTION ·High Power Dissi...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD111
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC = 10A
APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC
converter and
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO VEBO
Collector-Emitter Voltage Emitter-Base Voltage
80 V 10 V
IC Collector Current-Continuous
10 A
IE Emitter Current-Continuous IB Base Current-Continuous
-10 A 3A
PC
Collector Power Dissipation @TC=25℃
100
W
TJ Junction Temperature Tstg Storage Temperature
150 ℃ -65~150 ℃
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD111
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO Collector Cutoff Current
VCB= 50V; IE= 0
IEBO Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
fT Current-Gain—Bandwidth Product
COB Output Capacitance
VEB= 10V; IC=0 IC= 1A; VCE= 5V IC= 5A; VCE= 5V IC= 1A ; VCE= 10V IE= 0; VCB= 50V; f= 1MHz
MIN TYP. MAX UNIT 80 V 10 V
1.5 V 2.5 V 0.5 mA 10 mA 30 300 10 1 MHz 200 pF
h...