isc Silicon NPN Power Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC = 10A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC
converter and
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
IE
Emitter Current-Continuous
10
A
IB
Base Current-Continuous
3
A
PC
Collector Power Dissipation @TC=25℃ 100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
2SD111
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC=0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 50V; f= 1MHz
hFE-2 Classifications
R
O
Y
30-9...