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BD636

Part Number	BD636
Manufacturer	INCHANGE
Description	Silicon PNP Power Transistor
Features	isc Silicon PNP Power Transistor BD636 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter B...
Published	Feb 18, 2015
Datasheet	BD636 PDF File

Features

isc Silicon PNP Power Transistor BD636 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Complement to Type BD635 ·Minimum Lot-to-Lot variations for robust device performance an...

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