Document
2SB1032(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1436(K)
Outline
TO-3P
1 2 3
1. Base 2. Collector
(Flange) 3. Emitter
2 1
1.0 kΩ (Typ)
200 Ω (Typ)
3
ID
2SB1032(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C
Symbol VCBO VCEO VEBO IC I C(peak) ID*1 PC * 1 Tj Tstg
Rating –120 –120 –7 –10 –15 10 80 150 –55 to +150
Unit V V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO voltage
–120
Emitter to base breakdown voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test
I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off
— — 1000 — — — — — — —
Typ —
—
— — — — — — — — 0.8 4.0
Max Unit —V
—V
–100 µA –10 µA 20000 –1.5 V –3.0 V –2.0 V –3.5 V 3.0 V — µs — µs
Test conditions IC = –25 mA, RBE = ∞
IE = –200 mA, IC = 0
VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 IC = –5 A, IB = –10 mA*1 IC = –10 A, IB = –0.1 A*1 IC = –5 A, IB = –10 mA*1 IC = –10 A, IB = –0.1 A*1 ID = 10 A*1 VCC = –30 V, IC = –5 A, IB1 = –IB2 = –10 mA
2
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve 100
80
60
40
20
0 50 100 150 Case Temperature TC (°C)
Typical Output Characteristics
–10
–1.5
–1.0
Pc –0.9
=
80
W
–8 –0.8
–0.7
–6 –0.6
–0.5 –4
–0.4 –2 TC = 25°C
IB = 0 mA
0 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V)
DC current transfer ratio hFE
Collector Current IC (A)
2SB1032(K)
Area of Safe Operation
–30 iC (peak)
1 µs
–10 IC (max)
100
µs 1
–3
ms PW
= 10 ms DC (T C
–1.0
=
25°C)
–0.3
–0.1
–0.03 –3
Ta = 25°C 1 Shot pulse
–10 –30
–100 –300
Collector to emitter Voltage VCE (V)
30,000 10,000
3,000 1,000
DC Current Transfer Ratio vs. Collector Current
Ta =2–572°5C5°C°C
VCE = –3 V Pulse
300 100
30 –0.3
–1.0 –3
–10
Collector current IC (A)
–30
Collector Current IC (A) –2.0
3
2SB1032(K)
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
Switching time t (µs)
Saturation Voltage vs. Collector Current –10
–3 –1.0 –0.3
VRE (sat) VCE (sat)
–0.1
100 200
lC/lB = 500
–0.03
–0.01 –0.3
Ta = 25°C Pulse
–1.0 –3
–10
Collector current IC (A)
–30
Switching Time vs. Collector Current 10
3 tstg 1.0 ton 0.3 tf
0.1
0.03
0.01 –0.3
VCC = –30 V
IC = 500 IB1 = –500 IB2 Ta = 25°C
–1.0 –3
–10
Collector current IC (A)
–30
Diode current ID (A)
Diode Current vs. Forward Voltage 10
8
6
4
2 TC = 25°C
0 12345 Diode forward voltage VF (V)
4
1.0 5.0 ± 0.3
15.6 ± 0.3 φ3.2 ± 0.2
4.8 ± 0.2 1.5
Unit: mm
0.5
2.0 14.9 ± 0.2 19.9 ± 0.2
0.3
1.6 1.4 Max
2.0
2.8
18.0 ± 0.5
1.0 ± 0.2
3.6 0.9 1.0
5.45 ± 0.5
5.45 ± 0.5
0.6 ± 0.2
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-3P — Conforms 5.0 g
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation.