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B1032 Dataheets PDF



Part Number B1032
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SB1032
Datasheet B1032 DatasheetB1032 Datasheet (PDF)

2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2 1 1.0 kΩ (Typ) 200 Ω (Typ) 3 ID 2SB1032(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC =.

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2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2 1 1.0 kΩ (Typ) 200 Ω (Typ) 3 ID 2SB1032(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) ID*1 PC * 1 Tj Tstg Rating –120 –120 –7 –10 –15 10 80 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage –120 Emitter to base breakdown voltage V(BR)EBO –7 Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off — — 1000 — — — — — — — Typ — — — — — — — — — — 0.8 4.0 Max Unit —V —V –100 µA –10 µA 20000 –1.5 V –3.0 V –2.0 V –3.5 V 3.0 V — µs — µs Test conditions IC = –25 mA, RBE = ∞ IE = –200 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 IC = –5 A, IB = –10 mA*1 IC = –10 A, IB = –0.1 A*1 IC = –5 A, IB = –10 mA*1 IC = –10 A, IB = –0.1 A*1 ID = 10 A*1 VCC = –30 V, IC = –5 A, IB1 = –IB2 = –10 mA 2 Collector power dissipation Pc (W) Maximum Collector Dissipation Curve 100 80 60 40 20 0 50 100 150 Case Temperature TC (°C) Typical Output Characteristics –10 –1.5 –1.0 Pc –0.9 = 80 W –8 –0.8 –0.7 –6 –0.6 –0.5 –4 –0.4 –2 TC = 25°C IB = 0 mA 0 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) DC current transfer ratio hFE Collector Current IC (A) 2SB1032(K) Area of Safe Operation –30 iC (peak) 1 µs –10 IC (max) 100 µs 1 –3 ms PW = 10 ms DC (T C –1.0 = 25°C) –0.3 –0.1 –0.03 –3 Ta = 25°C 1 Shot pulse –10 –30 –100 –300 Collector to emitter Voltage VCE (V) 30,000 10,000 3,000 1,000 DC Current Transfer Ratio vs. Collector Current Ta =2–572°5C5°C°C VCE = –3 V Pulse 300 100 30 –0.3 –1.0 –3 –10 Collector current IC (A) –30 Collector Current IC (A) –2.0 3 2SB1032(K) Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Switching time t (µs) Saturation Voltage vs. Collector Current –10 –3 –1.0 –0.3 VRE (sat) VCE (sat) –0.1 100 200 lC/lB = 500 –0.03 –0.01 –0.3 Ta = 25°C Pulse –1.0 –3 –10 Collector current IC (A) –30 Switching Time vs. Collector Current 10 3 tstg 1.0 ton 0.3 tf 0.1 0.03 0.01 –0.3 VCC = –30 V IC = 500 IB1 = –500 IB2 Ta = 25°C –1.0 –3 –10 Collector current IC (A) –30 Diode current ID (A) Diode Current vs. Forward Voltage 10 8 6 4 2 TC = 25°C 0 12345 Diode forward voltage VF (V) 4 1.0 5.0 ± 0.3 15.6 ± 0.3 φ3.2 ± 0.2 4.8 ± 0.2 1.5 Unit: mm 0.5 2.0 14.9 ± 0.2 19.9 ± 0.2 0.3 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 0.6 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation.


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