FX501

Ordering number:EN4877 FX501 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features · Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX501 houses two chips, each being equivalent to the 2SB1205, in one package. · Matched pair characteristics. Package Dimensions unit:mm 2118 [FX501] 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on ceramic board (750mm2×0.8mm) 1 unit Mounted on ceramic board (750mm2×0.8mm) Conditions Ratings –25 –20 –5 –5 –8 –1 1.5 2 150 –50 to +150 Unit V V V A A A W W ˚C ˚C · Marking:501 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO (KOTO) BX-1388 No.4877-1/4 FX501 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 ...