2SD1404

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·B/W TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 2 A 2 W 40 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ 2SD1404 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; L= 50mH V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICES Collector Cutoff Current VCE= 250V; VBE= 0 hFE DC Current Gain IC= 5A ; VCE= 1.5V fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V VECF C-E Diode Forward Voltage IF= 6A tf Fall Time ...