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2SD1404

Part Number	2SD1404
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Feb 16, 2015
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capab...
Datasheet	2SD1404 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·B/W TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Tj Junct...

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