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IRGP4062-EPBF

International Rectifier
Part Number IRGP4062-EPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Feb 16, 2015
Detailed Description INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Juncti...
Datasheet PDF File IRGP4062-EPBF PDF File

IRGP4062-EPBF
IRGP4062-EPBF

Overview
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for ILM  • Positive VCE (ON) Temperature co-efficient • Tight parameter distribution • Lead Free Package Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI IRGP4062-EPbF C G E n-channel VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ.
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