MDP7N60

MDP7N60 N-channel MOSFET 600V MDP7N60 N-Channel MOSFET 600V, 7A, 1.15Ω General Description The MDP7N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP7N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω Applications @ Tjmax @ VGS = 10V @ VGS = 10V Power Supply PFC High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR Dv/dt EAS TJ, Tstg Rating 600 660 ±30 7.0 4.4 28 131 1.05 13.1 4.5 220 -55~150 Unit V V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Nov. 2009 Version 2.1 1 Symbol RθJA RθJC Rating 62.5 0.95 Unit oC/W MagnaChip Semiconductor Ltd. MDP7N60 N-channel MOSFET 600V Ordering Information Part Number MDP7N60TH Temp. Range -55~150oC Package TO-220 Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC...