IXTA180N10T Datasheet

IXTA180N10T Power MOSFET

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transie.

Features

z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - 42V Power Bus - ABS Systems z DC/DC Converters and Off-line UPS z Primary Switch for 24V and 48V Systems z Distributed Power Architechtures and VRMs z Electronic Valve Train Systems z High Current Switching Applications z High Voltage Synchronous Recifier © 2008 IXYS CORPORATION, All rights reserved DS99651A(3/08) Symbol Test Cond.