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IXTH160N10T

Power MOSFET

Description

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N10T IXTQ160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C ...

IXYS Corporation

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