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IXTA160N10T7

IXYS Corporation
Part Number IXTA160N10T7
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 N-Channel Enhancement Mode Avalanche Rated VD...
Datasheet PDF File IXTA160N10T7 PDF File

IXTA160N10T7
IXTA160N10T7

Overview
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 160 7.
0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA.
.
7) 100 V 100 V ± 30 160 120 430 25 500 3 V A A A A mJ V/ns 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut...


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