Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTH200N085T IXTQ200N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 200 5.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Cu...
