Preliminary Technical Information
TrenchMVTM
IXTC200N085T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 =
RDS(on) ≤
85 110 5.5
V A mΩ
Symbol
VDSS VDGR
VGSM
ID25 I
LRMS
IDM
IAR EAS
dv/dt
P D
TJ TJM Tstg
TL T
SOLD
V ISOL
FC
Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1...
