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IXTA200N085T7

IXYS Corporation

Power MOSFET


Description
Preliminary Technical Information TrenchMVTM IXTA200N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Tr...



IXYS Corporation

IXTA200N085T7

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