IXTP50N085T

Preliminary Technical Information TrenchMVTM Power MOSFET IXTP50N085T IXTY50N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 50 A 23 mΩ TO-220 (IXTP) GD S D (TAB) Symbol VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 18 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) 85 85 ± 20 50 25 130 10 250 3 V V V A A A A mJ V/ns 130 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. TO-220 TO-252 3g 0.35 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 25 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 Characteristic Values Min. Typ. Max. 85 V 2.0 4.0 V ± 100 nA 1 μA 100 μA 23 mΩ TO-252 (IXTY) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems ...