IXTC220N075T

Preliminary Technical Information TrenchMVTM IXTC220N075T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 115 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient 75 75 ± 20 V V V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 115 A 75 A 600 A 25 A 1.0 J IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C 3 V/ns 150 -55 ... +175 175 -55 ... +175 W °C °C °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds 50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS 300 260 2500 °C °C V Mounting force 11..65/2.5..15 N/lb. 2g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 4.3 5.0 mΩ ISOPLUS220 (IXTC) E153432 G DS G = Gate S = Source Isolated back surface D = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor D...