IXTP76N075T

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 V 76 A 12 mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 10 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 50 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Maximum Ratings 75 75 ± 20 76 75 210 10 500 V V V A A A A mJ 3 V/ns 176 -55 ... +175 175 -55 ... +175 W °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 3g 2.5 g Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 100 nA 1 μA 250 μA 9.7 12 mΩ TO-263 (IXTA) G S TO-220 (IXTP) (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-...