IXTP55N075T

Preliminary Technical Information TrenchMVTM Power MOSFET IXTP55N075T IXTY55N075T N-Channel Enhancement Mode Avalanche Rated VDSS = 75 ID25 = 55 RDS(on) ≤ 19.5 V A mΩ TO-220 (IXTP) Symbol VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG =18 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) 75 V 75 V ± 20 V 55 A 25 A 150 A 10 A 250 mJ 3 V/ns 130 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. TO-220 TO-252 3g 0.35 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 25 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 100 nA 1 μA 100 μA 19.5 mΩ GD S TO-252 (IXTY) D (TAB) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems D...