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IXTC280N055T

IXYS Corporation
Part Number IXTC280N055T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM IXTC280N055T Power MOSFET (Electrically Isolated Back Surface) N-Chann...
Datasheet PDF File IXTC280N055T PDF File

IXTC280N055T
IXTC280N055T

Overview
Preliminary Technical Information TrenchMVTM IXTC280N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 145 3.
6 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient 55 55 ± 20 V V V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 145 A 75 A 600 A 40 A 1.
5 J IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.
3 Ω TC = 25°C 3 V/ns 160 -55 .
.
.
+175 175 -55 .
.
.
+175 W °C °C °C 1.
6 mm (0.
062 in.
) from case for 10 s P...


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