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IXTA220N04T2-7 Dataheets PDF



Part Number IXTA220N04T2-7
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTA220N04T2-7 DatasheetIXTA220N04T2-7 Datasheet (PDF)

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N04T2-7 VDSS = ID25 = RDS(on) ≤ 40V 220A 3.5mΩ TO-263 (7-lead) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Symbol Test Conditions (TJ = 25°C unle.

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TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N04T2-7 VDSS = ID25 = RDS(on) ≤ 40V 220A 3.5mΩ TO-263 (7-lead) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 40 40 V V ± 20 V 220 A 160 A 660 A 110 A 600 mJ 360 W -55 ... +175 175 -55 ... +175 300 260 3 °C °C °C °C °C g Characteristic Values Min. Typ. Max. 40 V 2.0 4.0 V ±200 nA 5 μA 50 μA 2.8 3.5 mΩ 1 7 Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain (TAB) Features z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche Rated z Low RDS(on) Advantages z Easy to mount z Space savings z High power density Applications • Synchronous Buck Converters • High Current Switching Power Supplies • Battery Powered Electric Motors • Resonant-mode power supplies • Electronics Ballast Application • Class D Audio Amplifiers © 2008 IXYS CORPORATION, All rights reserved DS99962A(11/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VDS = 10V, ID = 60A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 20V, ID = 50A RG = 3.3Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC Characteristic Values Min. Typ. Max. 40 66 S 6820 1185 250 pF pF pF 15 ns 21 ns 31 ns 21 ns 112 nC 33 nC 30 nC 0.42 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Repetitive, Pulse width limited by TJM VSD IF = 50A, VGS = 0V, Note 1 trr IF = 110A, VGS = 0V IRM -di/dt = 100A/μs QRM VR = 20V Characteristic Values Min. Typ. Max. 220 A 660 A 1.0 V 45 ns 1.4 A 32 nC IXTA220N04T2-7 TO-263 (7-lead) (IXTA..7) Outline Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - Amperes 220 200 180 16.


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