Document
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA220N04T2-7
VDSS = ID25 =
RDS(on) ≤
40V 220A 3.5mΩ
TO-263 (7-lead)
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IAR EAS
PD
TJ TJM Tstg
TL TSOLD
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings 40 40
V V
± 20 V
220 A 160 A 660 A
110 A 600 mJ
360 W
-55 ... +175 175
-55 ... +175
300 260
3
°C °C °C
°C °C
g
Characteristic Values Min. Typ. Max.
40 V
2.0 4.0 V
±200 nA
5 μA 50 μA 2.8 3.5 mΩ
1
7
Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain
(TAB)
Features
z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche Rated z Low RDS(on)
Advantages
z Easy to mount z Space savings z High power density
Applications
• Synchronous Buck Converters • High Current Switching Power
Supplies
• Battery Powered Electric Motors • Resonant-mode power supplies • Electronics Ballast Application • Class D Audio Amplifiers
© 2008 IXYS CORPORATION, All rights reserved
DS99962A(11/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 20V, ID = 50A RG = 3.3Ω (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
Characteristic Values Min. Typ. Max.
40 66
S
6820 1185
250
pF pF pF
15 ns 21 ns 31 ns 21 ns
112 nC 33 nC 30 nC
0.42 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS VGS = 0V
ISM Repetitive, Pulse width limited by TJM
VSD IF = 50A, VGS = 0V, Note 1
trr IF = 110A, VGS = 0V
IRM -di/dt = 100A/μs
QRM
VR = 20V
Characteristic Values Min. Typ. Max.
220 A
660 A
1.0 V
45 ns 1.4 A 32 nC
IXTA220N04T2-7
TO-263 (7-lead) (IXTA..7) Outline
Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - Amperes
220 200 180 16.