IXTP200N055T2

TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 55 55 V V ± 20 V 200 A 120 A 500 A 100 A 600 mJ 360 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 1.13 / 10 °C °C Nm/lb.in. 2.5 g 3.0 g Characteristic Values Min. Typ. Max. 55 V 2.0 4.0 V ±200 nA 5 μA 50 μA 3.3 4.2 mΩ G S TO-220 (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International Standard Packages z 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Automotive - Motor Drives - 12V Battery - ABS Systems z DC/DC Converters and Off-Line UPS z Primary- Side Switch z High Current Switching Applications © 2008 IXYS CORPORATION, All rights reserved DS99919C(11/08...