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IXTP240N055T Dataheets PDF



Part Number IXTP240N055T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTP240N055T DatasheetIXTP240N055T Datasheet (PDF)

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA240N055T IXTP240N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 240 3.6 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C .

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA240N055T IXTP240N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 240 3.6 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Maximum Ratings 55 55 ± 20 240 75 650 25 1.0 V V V A A A A J 3 V/ns 480 -55 ... +175 175 -40 ... +175 W °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 3g 2.5 g Characteristic Values Min. Typ. Max. 55 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 3.0 3.6 mΩ TO-263 (IXTA) G S TO-220 (IXTP) (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99627 (11/06) IXTA240N055T IXTP240N055T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID =60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A td(off) RG = 5 Ω (External) tf Qg(on) Qgs Qgd VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A RthJC RthCS TO-220 Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) IS VGS = 0 V ISM Pulse width limited by TJM VSD IF = 50 A, VGS = 0 V, Note 1 trr IF = 25 A, -di/dt = 100 A/μs VR = 25 V, VGS = 0 V Characteristic Values Min. Typ. Max. TO-263AA (IXTA) Outline 75 132 S 7600 1240 260 pF pF pF 39 ns 54 ns 63 ns Pins: 1 - Gate 2 - Drain 75 ns 3 - Source 4, TAB - Drain 170 32 48 0.50 nC nC nC 0.31 °C/W °C/W Characteristic Values Min. Typ. Max. 240 A 650 A 1.2 V Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 4.83 2.79 0.51 1.14 0.99 1.40 0.46 1.14 0.74 1.40 8.64 7.11 9.65 8.13 9.65 6.86 2.54 10.29 8.13 BSC 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 0.46 0.74 Inches Min. Max. .160 .190 .080 .110 .020 .039 .045 .055 .018 .029 .045 .055 .340 .380 .280 .320 .380 .270 .100 .405 .320 BSC .575 .090 .040 .050 0 .625 .110 .055 .070 .015 .018 .029 TO-220AB (IXTP) Outline 70 ns Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 one or moreof the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405B2 6,759,692 7,063,975 B2 6,710,463 6771478 B2 7,071,537 ID - Amperes ID - Amperes 200 180 160 140 120 100 80 60 40 20 0 0 200 180 160 140 120 100 80 60 40 20 0 0 Fig. 1. Output Characteristics @ 25ºC VGS = 10V 9V 8V 7V 6V 5V 0.1 0.2 0.3 0.4 0.5 0.6 VDS - Volts Fig. 3. Output Characteristics @ 150ºC VGS = 10V 9V 8V 7V 0.7 6V 5V 0.2 0.4 0.6 0.8 1 1.2 1.4 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 120A Value vs. Drain Current 2.2 2 1.8 VGS = 10V 15V - - - - 1.6 TJ = 175ºC 1.4 1.2 TJ = 25ºC 1 0.8 0 40 80 120 160 200 240 280 320 ID - Amperes RDS(on) - Normalized © 2006 IXYS CORPORATION All rights reserved ID - Amperes RDS(on) - Normalized ID - Amperes IXTA240N055T IXTP240N055T Fig. 2. Extended Output Characteristics @ 25ºC 330 VGS = 10V 300 8V 270 7V 240 210 6V 180 150 120 90 60 5V 30 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS - Volts 5 Fig. 4. RDS(on) Normalized to ID = 120A Value vs. Junction Temperature 2.2 VGS = 10V 2.0 1.8 1.6 I D = 240A 1.4 I D = 120A 1.2 1.0 0..


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