Document
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA240N055T IXTP240N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 240 3.6
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220)
TO-220 TO-263
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Maximum Ratings
55 55
± 20
240 75
650
25 1.0
V V
V
A A A
A J
3 V/ns
480
-55 ... +175 175
-40 ... +175
W
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
3g 2.5 g
Characteristic Values Min. Typ. Max. 55 V
2.0 4.0 V
± 200 nA
5 μA 250 μA 3.0 3.6 mΩ
TO-263 (IXTA)
G S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications
© 2006 IXYS CORPORATION All rights reserved
DS99627 (11/06)
IXTA240N055T IXTP240N055T
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID =60 A, Note 1
Ciss Coss Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A td(off) RG = 5 Ω (External) tf
Qg(on) Qgs Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
RthJC RthCS
TO-220
Source-Drain Diode
Symbol
Test Conditions
TJ = 25°C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 50 A, VGS = 0 V, Note 1
trr IF = 25 A, -di/dt = 100 A/μs VR = 25 V, VGS = 0 V
Characteristic Values Min. Typ. Max.
TO-263AA (IXTA) Outline
75 132
S
7600 1240
260
pF pF pF
39 ns
54 ns
63 ns
Pins: 1 - Gate 2 - Drain
75 ns
3 - Source 4, TAB - Drain
170 32 48
0.50
nC nC nC
0.31 °C/W °C/W
Characteristic Values Min. Typ. Max.
240 A
650 A
1.2 V
Dim.
A A1
b b2
c c2
D D1
E E1 e
L L1 L2 L3 L4
R
Millimeter Min. Max.
4.06 2.03
4.83 2.79
0.51 1.14
0.99 1.40
0.46 1.14
0.74 1.40
8.64 7.11
9.65 8.13
9.65 6.86 2.54
10.29 8.13 BSC
14.61 2.29 1.02 1.27 0
15.88 2.79 1.40 1.78 0.38
0.46 0.74
Inches Min. Max.
.160 .190 .080 .110
.020 .039 .045 .055
.018 .029 .045 .055
.340 .380 .280 .320
.380 .270 .100
.405 .320 BSC
.575 .090 .040 .050
0
.625 .110 .055 .070 .015
.018 .029
TO-220AB (IXTP) Outline
70 ns
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 one or moreof the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405B2 6,759,692 7,063,975 B2
6,710,463
6771478 B2 7,071,537
ID - Amperes
ID - Amperes
200 180 160 140 120 100
80 60 40 20
0 0
200 180 160 140 120 100
80 60 40 20
0 0
Fig. 1. Output Characteristics @ 25ºC
VGS = 10V 9V 8V 7V
6V 5V
0.1 0.2 0.3 0.4 0.5 0.6
VDS - Volts
Fig. 3. Output Characteristics @ 150ºC
VGS = 10V 9V 8V 7V
0.7
6V 5V
0.2 0.4 0.6 0.8 1 1.2 1.4
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 120A Value vs. Drain Current
2.2
2
1.8 VGS = 10V 15V - - - -
1.6
TJ = 175ºC
1.4
1.2 TJ = 25ºC
1
0.8 0
40 80 120 160 200 240 280 320
ID - Amperes
RDS(on) - Normalized
© 2006 IXYS CORPORATION All rights reserved
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXTA240N055T IXTP240N055T
Fig. 2. Extended Output Characteristics @ 25ºC
330 VGS = 10V
300 8V 270 7V
240
210 6V
180
150
120
90
60 5V 30
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS - Volts
5
Fig. 4. RDS(on) Normalized to ID = 120A Value vs. Junction Temperature
2.2
VGS = 10V 2.0
1.8
1.6 I D = 240A
1.4 I D = 120A
1.2
1.0
0..