P50N05L

Data Sheet RFG50N05L, RFP50N05L January 2002 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages. Formerly developmental type TA09872. Ordering Information PART NUMBER PACKAGE BRAND RFG50N05L TO-247 RFG50N05L RFP50N05L TO-220AB RFP50N05L NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A. Packaging JEDEC STYLE TO-247 DRAIN (BOTTOM SIDE METAL) SOURCE DRAIN GATE Features 50A, 50V rDS(ON) = 0.022Ω UIS SOA Rating Curve (Single Pulse) Design Optimized for 5V Gate Drive Can be Driven Directly from CMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Tran...